View STD600S_4323136.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

S amHop Microelectronics C orp.
S T U/D600S
Aug 25,2006
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
60V
F E AT UR E S
( m W ) Max
ID
16A
R DS (ON)
S uper high dense cell design for low R DS (ON).
55 @ V G S = 10V 70 @ V G S = 4.5V
R ugged and reliable. TO-252 and TO-251 P ackage.
D
D G S
G D
S
G
S TU S E R IE S TO-252AA(D-P AK)
S TD S E R IE S TO-251(l-P AK)
S
AB S OL UTE MAXIMUM R ATINGS
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed
b a
(TA=25 C unles s otherwis e noted)
S ymbol VDS VGS Limit 60 20 16 10.7 30 15 50 35 -55 to 175 W C Unit V V A A A A
25 C 70 C
ID IDM IS PD TJ, TS TG
Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient R JC R JA 3 50 C /W C /W
S T U/D600S
N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
Parameter
5
S ymbol
BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS Rg
c
Condition
VGS = 0V, ID = 250uA VDS = 48V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 8A VGS =4.5V, ID= 4A VDS = 5V, VGS = 10V VDS = 10V, ID =8A
Min Typ C Max Unit
60 1 V uA 100 nA 1.0 1.8 45 50 20 16 670 72 45 3.2 13 10 25 9 14.2 7 1.7 3.8 3.0 70 V
m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 55 m ohm A S
PF PF PF
DYNAMIC CHAR ACTE R IS TICS c
Input Capacitance Output Capacitance R everse Transfer Capacitance Gate resistance VDS =30V, VGS = 0V f =1.0MHZ VGS =0V, VDS = 0V, f=1.0MHZ VDD = 30V ID = 8 A VGS = 10V R GE N = 3.3 ohm VDS =30V, ID =8A,VGS =10V VDS =30V, ID =8A,VGS =4.5V Gate-S ource Charge Gate-Drain Charge Qgs Qgd VDS =30V, ID = 8A VGS =10V
2
ohm
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge
tD(ON) tr tD(OFF) tf Qg
ns ns ns ns nC nC nC nC
S T U/D600S
E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
VSD
Condition
VGS = 0V, Is = 10A
Min Typ Max Unit
0.9 1.3 V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a
Notes a.Pulse Test:Pulse Width 300us, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing.
30 V G S =10V 24 V G S =4.5V 16 V G S =3.5V 20
ID, Drain C urrent(A)
18
ID, Drain C urrent (A)
V G S =8V
25 C 12 8 4 0
12 V G S =3V 6 0
T j=125 C -55 C 0 0.8 1.6 2.4 3.2 4.0 4.8
0
0.5
1
1.5
2
2.5
3
V DS , Drain-to-S ource Voltage (V )
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
120
F igure 2. Trans fer C haracteris tics
2.0
R DS (ON), On-R es is tance Normalized
100
1.8 1.6 1.4 1.2 1.0 0.0
V G S =10V ID=8A V G S =4.5V ID=4A
R DS (on) (m W)
80 60 40 20 1 V G S =4.5V
V G S =10V
1
6
12
18
24
30
0
25
50
75
100
125
150
T j( C )
ID, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage
F igure 4. On-R es is tance Variation with Drain C urrent and Temperature
3
S T U/D600S
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.3 ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150
6
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation with T emperature
144
F igure 6. B reakdown V oltage V ariation with T emperature
20.0
ID=8A
Is , S ource-drain current (A)
120
10.0
125 C
R DS (on) (m W)
96 125 C 72 48 75 C 24 0 25 C
25 C
75 C
0
2
4
6
8
10
1.0 0.2
0.4
0.6
0.8
1.0
1.2
V G S , G ate- S ource Voltage (V )
V S D, B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs . G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
4
S T U/D600S
1200
V G S , G ate to S ource V oltage (V )
10 8 6 4 2 0 VDS =30V ID=8A
1000
C , C apacitance (pF )
800 600 400 200 0 C rs s 0 5 10 C os s
C is s
6
15
20
25
30
0
2
4
6
8
10
12
14 16
V DS , Drain-to S ource Voltage (V )
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
F igure 10. G ate C harge
220
S witching T ime (ns )
60 10
R
DS
ID, Drain C urrent (A)
100 60 10
T D(off)
Tr T D(on) Tf
(O
N)
L im
it
10
DC
10m
s
0m
s
1s
1
1 1
V DS =30V ,ID=8A V G S =10V
0.1 0.03
VGS =10V S ingle P ulse T A=25 C 0.1 1 10 60 80
6 10
60 100 300 600
R g, G ate R es is tance (W)
V DS , Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
2
F igure 12. Maximum S afe O perating Area
r(t),Normalized E ffective T ransient T hermal Impedance
1 D=0.5
0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS E 0.01 10
-5 -4 -3 -2 -1
P DM t1 1. 2. 3. 4. 10 10 10 t2
R cJ A (t)=r (t) * R cJ A R cJ A=S ee Datas heet T J M-T A = P DM* R cJ A (t) Duty C ycle, D=t1/t2 1 10
10
S quare Wave P uls e Duration (s ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve 5
S T U/D600S
6
S T U/D600S
5 95 7 84 9 6.00
35 05 85 0.94 4 3 0
9 7 30 3 9 36
3 41 3 3 5 1
4
L2
2.29 9.70 1.425 0.650 0.600
BSC 1 1.625 0.850 REF.
0.090 82 56 6 0.024
BSC 398 0.064 33 REF.
7
S T U/D600S
TO-251 Tube
TO251 Tube/TO-252 Tape and Reel Data
" A"
TO-252 Carrier Tape
UNIT:P PACKAGE TO-252 (16 P) A0 6.80 O0.1 B0 10.3 O0.1 K0 2.50 O0.1 D0 r2 D1
r1.5 + 0.1 -0
E 16.0 0.3O
E1 1.75 0.1O
E2 7.5 O0.15
P0 8.0 O0.1
P1 4.0 O0.1
P2 2.0 O0.15
T 0.3 O0.05
TO-252 Reel
S
UNIT:P TAPE SIZE 16 P REEL SIZE r 330 M r330 O 0.5 N r97 O 1.0 W
17.0 + 1.5 -0
T 2.2
H
r13.0 + 0.5 - 0.2
K 10.6
S 2.0 O0.5
G
R
V
8

▲Up To Search▲

Price & Availability of STD600S

	To Download STD600S Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .